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| Datasheet File OCR Text: |
| NTE2023 Integrated Circuit General Purpose, High Current 7-Segment Display Driver Description: The NTE2023 is a general purpose high current transistor array in a 16-Lead DIP type package comprised of seven high current silicon NPN transistor on a common monolithic substrate. It is connected in a common-collector configuration. Absolute Maximum Ratings: Power Dissipation (Any One Transistor), PD . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 500mW Operating Ambient Temperature Range, Topr . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -40 to +85C Individual Transistor Ratings: Collector-Emitter Voltage, VCEO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 16V Collector-Base Voltage, VCBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 20V Collector-Substrate Voltage, VCIO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 20V Emitter-Base Voltage, VEBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5V Collector Current, IC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 200mA Base Current, IB . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 20mA Note 1. The collector of each transistor in the NTE2023 is isolated from the substrate by an integral diode. The substrate must be connected to a voltage which is more negative than any collector voltage so as to maintain isolation between transistors, and to provide normal transistor action. Undesired coupling between transistors is avoided by maintaining the substrate (5) at either DC or signal (AC) ground. An appropriate bypass capacitor can be used to establish a signal ground. Electrical Characteristics: (TA = +25C unless otherwise specified) Parameter Collector-Emitter Breakdown Voltage Collector-Substrate Breakdown Voltage Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage Forward Current Transfer Ratio Symbol Test Conditions Min 20 20 16 5 30 40 Typ 80 80 40 7 80 85 Max - - - - - - Unit V V V V V(BR)CES IC = 500A V(BR)CIE ICI = 500A V(BR)CEO IC = 1mA V(BR)EBO IC = 500A hFE VCE = 0.5V, IC = 30mA VCE = 0.8V, IC = 50mA Electrical Characteristics (Cont'd): (TA = +25C unless otherwise specified) Parameter Base-Emitter Saturation Voltage Collector-Emitter Saturation Voltage Collector Cutoff Current Symbol VBE(sat) VCE(sat) ICEO ICBO Test Conditions IC = 30mA IC = 30mA IC = 50mA VCE = 10V VCB = 10V Min - - - - - Typ 0.75 0.13 0.2 - - Max 1 0.5 0.7 10 1 Unit V V V A A Pin Connection Diagram Q1 Emitter Q2 Emitter Q2 Base Q5 Emitter Substrate Q5 Base Q6 Emitter Q6 Base 1 2 3 4 5 6 7 8 16 VDD 15 Common Cathode 14 Q3 Emitter 13 Q3 Base 12 Q4 Emitter 11 Q4 Base 10 Q7 Base 9 Q7 Emitter 16 9 1 8 .260 (6.6) Max .200 (5.08) Max .870 (22.0) Max .100 (2.54) .700 (17.78) .099 (2.5) Min |
Price & Availability of NTE2023
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